PART |
Description |
Maker |
APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
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ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
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IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
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IRF[International Rectifier]
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APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
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Advanced Power Technology Ltd.
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GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA[Toshiba Semiconductor]
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BSM100GB120DN2 100B12N2 C67076-A2107-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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SKW15N60 SKB15N60 SKP15N60 |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast S-IGBT in NPT-Technology with An...
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INFINEON[Infineon Technologies AG]
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C67070-A2701-A67 050B17N2 BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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C67047-A2251-A2 BYP301 |
FRED-FET Diode CAT5E 350MHZ PATCH CORD, 1 FT BLUE,SNAGLESS BOOT FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics) From old datasheet system
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Infineon SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BYP300 |
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics) From old datasheet system FRED-FET Diode
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Siemens Semiconductor G... Infineon
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BYP103 C67047-A2066-A2 SIEMENSAG-C67047-A2066-A2 |
From old datasheet system FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS) FRED-FET Diode
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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BYP100 C67047-A2254-A2 BYP300 C67047-A2250-A2 |
From old datasheet system FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS) FRED-FET Diode
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SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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